Type-II InAs/GaSb superlattice grown on InP substrate

► GaSb was grown by MBE method on InP substrate without crosshatch. ► Thicker GaSb included less threading dislocations. ► Crystalline quality of InAs/GaSb SL on InP substrate was improved by using thick GaSb buffer layer. ► SL grown on InP substrate showed clear PL peak.