Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxy

The thermal-activated carrier transfer processes in a Zn0.98Cd0.02O thin film grown by plasma-assisted molecular beam epitaxy were investigated using temperature-dependent and time-resolved photoluminescence (PL) spectroscopy. As the temperature increases from 50 to 220 K, the carriers transfer from shallow to deep localized states. Additionally, the carriers escape from the deep localized states above 220 K due to an activation energy of about 19 meV.

► Emissions of X/Cd, X/Cdn, and X/Cd clusters from Zn0.98Cd0.02O thin film were investigated by PL and TRPL spectroscopy.
► From 50 to 220 K, the carriers transfer from shallow X/Cdn states to deep localized X/Cdn states.
► Above 220 K, the carriers escape from the deep localized X/Cdn states to X/Cd states.