Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE

The boron containing III/V-semiconductors (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P are grown by metal–organic-vapour-phase-epitaxy. The influence of growth conditions on maximum boron incorporation, boron incorporation efficiency and structural quality is investigated.A maximum boron concentration of 7.8% for (BGa)P and 9.9% for (BGa)(AsP) can be realized. Low growth temperature of 525 °C and high V/III-ratios are needed to increase the maximum boron concentration and to improve the structural quality.A difference in boron incorporation efficiency and maximum boron concentration between (BGa)As and (BGa)P is observed. The TBAs/V ratio in the gas phase is identified as the factor determining the boron incorporation efficiency in (BGa)(AsP). (BGaIn)P samples with an indium concentration of 53% and a maximum boron concentration of 4% are realized.The possibility to achieve boron concentrations of several percent in III/V-semiconductors offers new perspectives for strain engineering in devices like multi-junction solar cells or semiconductor lasers.

► Growth of B-containing III/V semiconductors (arsenides and phosphides ) by MOVPE.
► High quality films by control of growth temperature, and V/III ratio.
► Maximum boron content up to 9%.