Scintillation properties of Bi4(Ge1−xSix)3O12 single crystals grown by Czochralski method

Using the Czochralski method, Bi4(Ge1−xSix)3O12 (BGSO) (where x=0.1, 0.2, 0.3, 0.5, 0.7, 0.8 and 0.9) single crystals with different ratios of Bi4Ge3O12 and Bi4Si3O12 are grown. Comparing with published results, this report covers wide range of BGSO with different mole ratios of BSO and BGO crystals. Scintillation properties of the BGSO with x=0.1 and 0.9 mol ratios are presented. Problems during growth process such as non-transparency and cracks of this material are also presented. X-rays excitation of the grown samples showed emission spectra between 350 nm and 700 nm wavelength region. Under γ-rays excitation from a 137Cs source, energy resolutions of 19% and 29% (FWHM) are obtained for x=0.1 and 0.9, respectively. BGSO showed three decay time components under γ-ray excitation at room temperature. At x=0.1 highest light yield of 36% of BGO is found.

► Single crystals of Bi4(Ge1−xSix)3O12 (BGSO) are grown by Czochralski technique
► X-rays emission spectra is observed between 350 nm and 700 nm wavelength region.
► Best energy resolutions of 19% and 29% (FWHM) are obtained for x=0.1 and 0.9.
► Light yield increases as the value of x decreases from 0.9 to 0.1.
► We observed three decay time components for this scintillator.