Effects of substrate nitridation and buffer layer on the crystalline improvements of semi-polar InN(101¯3) crystal on GaAs(110) by MOVPE

► We reported the effects of substrate nitridation to the crystalline quality of semi-polar InN. ► We investigated the effects of buffer insertion to the crystalline quality of semi-polar InN. ► The mechanism of dislocation annihilation was studied by TEM, XRD analysis.