Preparation of the c-axis oriented AlN film by laser chemical vapor deposition using a newly proposed Al(acac)3 precursor

Highly oriented AlN film was prepared on a c-plane sapphire substrate by laser chemical vapor deposition using a newly proposed aluminum acetylacetonate precursor and ammonia gas as source reactants. The c-axis oriented AlN films were obtained on the c-plane sapphire substrate at deposition temperatures from 900 to 1230 K. AlN film prepared at 1047 K showed an epitaxial relation as (0001)AlN//(0001)Al2O3,[11−20]AlN//[10−10]Al2O3. The full width at half maximum (FWHM) of the X-ray rocking curve for AlN (0002) plane increased with increasing deposition temperature. The c-axis lattice parameter decreased with increasing deposition temperature.

► The c-axis oriented AlN film was prepared by laser chemical vapor deposition.
► AlN film was deposited using an oxygen-containing Al(acac)3 precursor.
► The Al-O bond is de-bonded by laser irradiation, enabling the formation of AlN film.