Selective formation of thickness-controlled fullerene disks by vapor–solid process

Thin C60 disks were selectively prepared without any solvent using a vapor–solid process. A tube furnace with three separate heating zones was used. Controlling the substrate temperature and the vapor temperature made the selective formation of the thin C60 disks possible. The temperature of the first and second zones for evaporation of C60 was fixed at 650 °C, the temperature of the third zone at 500 °C, and the temperature of the substrate between 150 and 300 °C by water circulation through the sample stage. The thickness of the thin C60 disks decreased as the substrate temperature increased in the range of 150–300 °C. This occurred because the growth rate of a crystal increases as the difference between the evaporation temperature and the substrate temperature (crystallization temperature) of the fullerene increases.

► Thin C60 disks were selectively prepared using a vapor–solid process.
► Thickness of C60 disks was controlled by changing the substrate temperature.
► Thickness of C60 disks decreased as the substrate temperature increased.