کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791493 | 1524470 | 2012 | 5 صفحه PDF | دانلود رایگان |

Vertical GaAs/AlGaAs heterostructure nanowires (NWs) with pure zinc blende structure were grown on Si (111) substrates by using AlGaAs/GaAs buffer layers. Axial and radial heterostructure NWs with different facets can be realized by tuning the growth temperature, so quantum wells with a triangular cross section enclosed by two {112} and one {110} facets can be obtained. Intensity of the room temperature photoluminescence can be greatly enhanced by passivating the surface states of GaAs NWs via growth of higher band-gap AlGaAs shells. The relevant growth mechanism is discussed.
► Pure zinc blende GaAs/AlGaAs NWs on Si substrates were realized by using buffer layers.
► Heterostructure NWs with different facets can be realized by tuning the growth temperature.
► Corresponding room temperature PL was investigated.
Journal: Journal of Crystal Growth - Volume 359, 15 November 2012, Pages 30–34