کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1791493 1524470 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth of zinc blende GaAs/AlGaAs heterostructure nanowires on Si substrate by using AlGaAs buffer layers
چکیده انگلیسی

Vertical GaAs/AlGaAs heterostructure nanowires (NWs) with pure zinc blende structure were grown on Si (111) substrates by using AlGaAs/GaAs buffer layers. Axial and radial heterostructure NWs with different facets can be realized by tuning the growth temperature, so quantum wells with a triangular cross section enclosed by two {112} and one {110} facets can be obtained. Intensity of the room temperature photoluminescence can be greatly enhanced by passivating the surface states of GaAs NWs via growth of higher band-gap AlGaAs shells. The relevant growth mechanism is discussed.


► Pure zinc blende GaAs/AlGaAs NWs on Si substrates were realized by using buffer layers.
► Heterostructure NWs with different facets can be realized by tuning the growth temperature.
► Corresponding room temperature PL was investigated.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 359, 15 November 2012, Pages 30–34
نویسندگان
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