Grain structure of thin-film silicon by zone melting recrystallization on SiC base layer

► Investigation of Si-layers obtained by zone melting recrystallization on SiC-base. ► Twins form 1 to 100 μm wide stripes nearly parallel to the growth direction. ► This regime of twinning differs from layers formed on SiO2-base. ► As twins show no enhanced recombination the regime is favorable for solar cells.