Investigation of grain boundaries in BaSi2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

► Undoped n-type BaSi2 layers were grown epitaxially on Si(111). ► Grain size of the BaSi2 was found to be 0.1-0.3 μm. ► Grain boundaries were found to consist of {011} plane of BaSi2. ► Diffusion length of minority carriers in the n-BaSi2 was estimated to be about 10 μm.