Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

We report on growth and physical properties of vanadium dioxide (VO2) films on model conducting oxide underlayers (Nb-doped SrTiO3 and RuO2 buffered TiO2 single crystals). The VO2 films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The VO2 film grown on Nb doped SrTiO3 shows over two orders of magnitude metal–insulator transition, while VO2 film on RuO2 buffered TiO2 shows a smaller resistance change but with an interesting two step transition. X-ray photoelectron spectroscopy has been performed as a function of depth on both sets of structures to provide mechanistic understanding of the transition characteristics. We then investigate voltage-driven transition in the VO2 films grown on Nb-doped SrTiO3 substrate as a function of temperature. The present study contributes to efforts towards correlated oxide electronics utilizing phase transitions.

► Synthesis of VO2 thin films on conducting oxide substrates by rf-sputtering.
► Interesting metal to insulator transition characteristics on different films.
► Electrically-driven metal to insulator transition of representative VO2 films.