کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1791975 1023627 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE
چکیده انگلیسی

We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740 nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation.


► We realized deep-red emission from InGaN-based LEDs on c-plane sapphire substrates.
► The electroluminescence peak wavelength was 740 nm, in spite of a wide FWHM.
► Indium incorporation was enhanced by a smaller distance of the reactor.
► A number of quantum wells led to the relaxation of InGaN wells and higher In content.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 343, Issue 1, 15 March 2012, Pages 13–16
نویسندگان
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