کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1791975 | 1023627 | 2012 | 4 صفحه PDF | دانلود رایگان |

We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740 nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation.
► We realized deep-red emission from InGaN-based LEDs on c-plane sapphire substrates.
► The electroluminescence peak wavelength was 740 nm, in spite of a wide FWHM.
► Indium incorporation was enhanced by a smaller distance of the reactor.
► A number of quantum wells led to the relaxation of InGaN wells and higher In content.
Journal: Journal of Crystal Growth - Volume 343, Issue 1, 15 March 2012, Pages 13–16