Low-temperature growth of In-assisted silicon nanowires

Indium-assisted silicon nanowires have been grown by plasma enhanced chemical vapor deposition at temperatures down to 330 °C without plasma pre-treatment of the In films deposited on silicon substrates before the growth. Two families of wires have been observed: thin, tapered wires that show a metallic nanoparticle at their top, and thick, almost cylindrical wires that have no metallic nanoparticle at their final end. We suggest that the two types of NWs grow after different mechanisms. Moreover, we point out important growth features that are common with Au- and self-induced nanowires.

► Indium was used to induce low-temperature growth of Si nanowires.
► Two types of Si nanowires are observed: with or without In nanoparticles on top.
► Two types of nanowires grow after different mechanisms.
► The lowest growth temperature is the same for In-, Au- and self-induced Si nanowires.