Migration-enhanced metal–organic chemical vapor deposition of AlxIn1−xN/GaN heterostructures (x>0.75) on c-plane sapphire

The growth and the characterization of AlxIn1−xN/GaN (x>0.75) heterostructures by migration-enhanced metal–organic chemical vapor deposition are optimized through variations in growth temperature and precursor modulation schemes, resulting in high quality films. AlxIn1−xN/GaN heterostructures were characterized by XRD reciprocal space mapping in order to calculate the relative strain to GaN as a function of indium composition. AFM measurements yielded an rms roughness value of ∼4 Å. By controlling indium incorporation, a maximum 2DEG mobility of ∼1270 cm2/V s, a maximum sheet charge density of ∼4.1×1013 cm−2, and a minimum sheet resistance of 179.9 Ω/□ were obtained.

► MEMOCVD growth of AlxIn1−xN/GaN heterostructures (x>0.75).
► Pulsed growth technique improves film morphology, crystalline quality, and electrical characteristics.
► Record low sheet resistance of 179.9 Ω/□ achieved.