Demonstration of p-type 3C-SiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C

► P-type doped 3C-SiC is grown on 150 mm Si substrate by atomic-layer epitaxy at 1000 °C. ► The equipment is conventional low-pressure chemical vapor deposition reactor. ► The doping element is aluminum. ► Aluminum concentration is proportional to supply volume of trimethylaluminium.