کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792244 | 1023638 | 2011 | 6 صفحه PDF | دانلود رایگان |
We have attempted to grow a-axis-oriented γ′-Fe4N epitaxial films with smooth surfaces at around 400 °C on LaAlO3(LAO)(1 0 0), SrTiO3(STO)(1 0 0) and MgO(1 0 0) substrates by molecular beam epitaxy using solid Fe and a radio-frequency NH3 plasma as the Fe and N sources, respectively. The lattice mismatch of these substrates to γ′-Fe4N is 0%, 3% and 11%, respectively. Epitaxial growth of γ′-Fe4N films was successfully achieved on the STO(1 0 0) and LAO(1 0 0) substrates. It was found from reflection high-energy electron diffraction and X-ray diffraction that the a-axis orientation of γ′-Fe4N was degraded with increasing lattice mismatch. High-angle annular dark-field scanning transmission electron microscopy and electron energy-loss spectroscopy measurements showed that amorphous Al–O layers were present at the γ′-Fe4N/LAO interface.
Journal: Journal of Crystal Growth - Volume 322, Issue 1, 1 May 2011, Pages 63–68