کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792361 | 1023642 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Recrystallization of silicon polygonal tubes using an electric closed molten zone
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
This article describes a process for generating and controlling a closed molten zone with an induced electrical current, and using it for silicon ribbon tube recrystallization. The silicon tube is the secondary loop of a transformer in which the current is generated by electrical induction. The Joule heat caused by the induced current generates a closed molten line along a cross section of the silicon tube; scanning this molten zone along the tube axis results in material recrystallization, with no contact with foreign materials. From the recrystallized silicon tube faces test solar cells were produced, revealing minority carrier diffusion lengths around 100 μm.
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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 324, Issue 1, 1 June 2011, Pages 26–30
Journal: Journal of Crystal Growth - Volume 324, Issue 1, 1 June 2011, Pages 26–30
نویسندگان
R.M. Gamboa, M.C. Brito, J.M. Serra, J. Maia Alves, A.M. Vallêra,