Morphology and crystal structure control of GaAs nanowires grown by Au-assisted MBE with solid As4 source

GaAs nanowires growth on GaAs(1 1 1)B substrates by Au-assisted MBE with solid As4 source were investigated as function of group III and V flux, growth time and growth temperature. It was found that the axial, radial growth and crystal structure of NWs could be controlled through tuning growth parameters. The optimal strategies for one dimensional nano-scale devices fabrications were also suggested.

► The stability of side facets was related with As4 flux.
► At As-rich conditions, the radial growth rate exhibited linear relationship with Ga flux.
► The crystal structure of NWs could be adjusted by tuning the growth parameters of MBE.