کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1792452 1023645 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates
چکیده انگلیسی
The incorporation of indium (In) and gallium (Ga) group III elements in the growth of ternary InGaAs layers by atomic layer epitaxy (ALE) was investigated using various growth conditions. By dividing the growth rate of InGaAs into InAs and GaAs components, it was found that the incorporation of In and Ga strongly depends on the source exposure time, H2 purge, and growth temperature. At 500 °C the growth rate of InAs is determined by the metalorganic precursor supply duration and the growth rate of GaAs is determined by the AsH3 exposure duration. With increasing H2 purge time, Ga incorporation is enhanced. At an elevated temperature of 550 °C the incorporation of both In and Ga is dependent on metalorganic precursor exposure, while at a low temperature of 400 °C the In and Ga incorporation is limited by the AsH3 exposure. A growth model was proposed to explain the ALE growth of a ternary InGaAs layer at 500 °C, which may involve metal In and GaCH3 adsorbates as the In and Ga species on the growing surface, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 321, Issue 1, 15 April 2011, Pages 60-64
نویسندگان
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