Patterned growth of high aspect ratio silicon wire arrays at moderate temperature

High aspect ratio silicon wire arrays with excellent pattern fidelity over wafer-scale area were grown by chemical vapor deposition at moderate temperature, using a gas mixture of silane and hydrogen chloride. An innovative two-step process was developed for in situ doping of silicon wires by diborane. This process led to high p-type doping levels, up to 1018–1019 cm−3, without degradation of the silicon wire array pattern fidelity.