Model based, pulling rate, thermal and capillary conditions setting for silicon tube growth

In this paper a mathematical model based procedure for setting of pulling rate, capillary and thermal conditions to grow a silicon tube with prior established inner and outer radius by shaped growth with the catching boundary condition is presented. The model is defined by a set of three differential equations governing the evolution of outer radius, inner radius and the crystallization front level. The right hand members of the system of differential equations serve as tools for setting the above parameters. Numerical illustration and simulation of the growth process are presented.