کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1792558 1023649 2010 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic field
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic field
چکیده انگلیسی

To examine the applicability of LES turbulence modeling for CZ silicon crystal growth systems with traveling magnetic fields, LES calculations with Smagorinsky–Lilly turbulence model and van Driest damping at the solid walls are carried out. The program package for the calculations was developed on the basis of the open-source code library OpenFOAM®OpenFOAM®. A previously published laboratory model with low temperature melt InGaSn, a 20” crucible, and process parameters corresponding to industrial Czochralski silicon systems is considered. Flow regimes with two crystal and crucible rotation rates and with different strengths of the traveling magnetic field “down” are analyzed. The calculated distributions of averaged temperature and standard temperature deviations are compared with measured ones in the laboratory system, and a relatively good agreement between them is shown. The influence of chosen time steps and grid sizes is analyzed by comparing Fourier spectra of temperature time-autocorrelation functions and temperature spatial distributions, and it is shown that the used moderate meshes of few hundred thousand cells can be applied for practical calculations.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 21, 15 October 2010, Pages 3225–3234
نویسندگان
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