کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792574 | 1023650 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A proper solution to study the etch pits on LiAlO2 single crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: A proper solution to study the etch pits on LiAlO2 single crystal A proper solution to study the etch pits on LiAlO2 single crystal](/preview/png/1792574.png)
چکیده انگلیسی
Detailed structures of the etch pits on the (1Â 0Â 0), (0Â 1Â 0), and (0Â 0Â 1) surfaces of LiAlO2 single crystals have been studied. The crystal was grown by the Czochralski-pulling technique. Hot water is found to be a good etching solution for LiAlO2 crystal. On the (1Â 0Â 0) surface, many shallow rhomboidal etch pits with a deep rhombic pit at the center are revealed and can line up to form boundaries. These etch pits are categorized into two groups which are symmetric relative to the [0Â 1Â 0] direction and are separated by boundaries made up of dense etch pits. On the (0Â 0Â 1) surface, square pyramid-like etch pits are present. However, rectangle-like etch pits are found on the (0Â 1Â 0) surface, which may not be related to dislocations. The density and the distribution of dislocations are studied. A scheme of the domain structure is proposed to explain the observed shapes and distributions of etch pits.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 313, Issue 1, 15 December 2010, Pages 42-46
Journal: Journal of Crystal Growth - Volume 313, Issue 1, 15 December 2010, Pages 42-46
نویسندگان
Huichun Huang, Mitch M.C. Chou, Dershin Gan, Pouyan Shen,