کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1792574 1023650 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A proper solution to study the etch pits on LiAlO2 single crystal
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
A proper solution to study the etch pits on LiAlO2 single crystal
چکیده انگلیسی
Detailed structures of the etch pits on the (1 0 0), (0 1 0), and (0 0 1) surfaces of LiAlO2 single crystals have been studied. The crystal was grown by the Czochralski-pulling technique. Hot water is found to be a good etching solution for LiAlO2 crystal. On the (1 0 0) surface, many shallow rhomboidal etch pits with a deep rhombic pit at the center are revealed and can line up to form boundaries. These etch pits are categorized into two groups which are symmetric relative to the [0 1 0] direction and are separated by boundaries made up of dense etch pits. On the (0 0 1) surface, square pyramid-like etch pits are present. However, rectangle-like etch pits are found on the (0 1 0) surface, which may not be related to dislocations. The density and the distribution of dislocations are studied. A scheme of the domain structure is proposed to explain the observed shapes and distributions of etch pits.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 313, Issue 1, 15 December 2010, Pages 42-46
نویسندگان
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