کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1792616 1023652 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
چکیده انگلیسی
Dielectric layer containing CoSi2 nanocrystals was directly fabricated by plasma-enhanced atomic layer deposition using CoCp2 and NH3 plasma mixed with SiH4 without annealing process. Synchrotron radiation X-ray diffraction and X-ray photoelectron spectroscopy results confirmed the formation of CoSi2 nanocrystal. The gate stack composed of dielectric layer containing CoSi2 nanocrystals with ALD HfO2 capping layer together with Ru metal gate was analyzed by capacitance-voltage (C-V) measurement. Large hysteresis of C-V curves indicated charge trap effects of CoSi2 nanocrystals. The current process provides simple route for the fabrication of nanocrystal memory compatible with the current Si device unit processes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 15, 15 July 2010, Pages 2215-2219
نویسندگان
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