Epitaxial growth of (1 0 0)-oriented β-FeSi2 film on 3CSiC(1 0 0) plane

(1 0 0)-oriented β-FeSi2 films were epitaxially grown on 3CSiC-buffered Si(1 0 0) substrates by co-sputtering iron and silicon. The full-width at half maximum of the rocking curve of the β-FeSi2800 diffraction peaks was 1.8°. The epitaxial relationship between β-FeSi2 and 3CSiC was identified as Type B. The domain size leading to minimum domain coherent strain was smaller when the epitaxial relationship was Type B than when it was Type A, indicating that the epitaxial relationship between the β-FeSi2 and 3CSiC was Type B.