Growth and segregation of GaAs–AlxIn1−xP core-shell nanowires

The development of a ternary AlxIn1−xP shell grown around GaAs nanowires epitaxially grown in the [1¯1¯1¯] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {11¯0} macro facets with small (approx. 5 nm) {112¯} facets independent of the GaAs core side facets. Phase segregation is observed as AlP developing from the {112¯} facets, while Al0.5In0.5P is found in the rest of the ternary shell.