کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792791 | 1524478 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Design and realization of low density InAs quantum dots on AlGaInAs lattice matched to InP(0Â 0Â 1)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We present detailed growth studies of InAs nanostructures grown on AlxGayIn(1âxây)As lattice matched to an InP(0Â 0Â 1) substrate using molecular beam epitaxy. Highly elongated quantum dash like structures are typically favoured in this material system, due to very anisotropic migration lengths along the [1Â â1Â 0] and [1Â 1Â 0] directions. In order to increase the short migration length along the [1Â 1Â 0]-direction we used ultra low growth rates down to 3Ã10â3 monolayers per second. We show that this offers the possibility to form InAs quantum dots with a low surface density, in contrast to the most commonly formed quantum dash structures. To tailor the emission wavelength of the quantum dots, three methods were studied: (i) the variation of the bandgap of the surrounding material by adjusting the aluminium to gallium ratio, (ii) the variation of the bandgap of the quantum dot material by incorporating antimony and (iii) the variation of the height of the quantum dots by closely stacking two layers of quantum dots upon each other.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issues 16â17, 1â15 August 2010, Pages 2300-2304
Journal: Journal of Crystal Growth - Volume 312, Issues 16â17, 1â15 August 2010, Pages 2300-2304
نویسندگان
Roland Enzmann, Mario BareiÃ, Daniela Baierl, Norman Hauke, Gerhard Böhm, Ralf Meyer, Jonathan Finley, Markus-Christian Amann,