کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792894 | 1023660 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of threading dislocations. The growth of AlGaN/GaN layers is uniform and shows sharp interfaces between the AlGaN and GaN epilayers. AlGaN nanodots/nanowires, which are formed at the apexes of the nano-pyramids/nano-ridges, are found to be homogeneous in size and to have a higher aluminum mole fraction than the surrounding material. In contrast, the InGaN/GaN growth shows no quantum dots at the apexes of the nanostructures. We found that the growth facets of different Miller's indices are formed on the InGaN/GaN nano-ridges. Energy dispersive X-ray spectroscopy (EDX) shows higher indium incorporation at the intersection of the growth facets. Cathodoluminescence measurements show enhanced luminescence intensity from InGaN multi-quantum wells (MQWs) grown on the nanostructure compared to that from InGaN MQWs grown on an unpatterned area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 160-163
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 160-163
نویسندگان
W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden,