کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792906 | 1023660 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Strain controlled growth of crack-free GaN with low defect density on silicon (1 1 1) substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We demonstrate the growth of 4.5 μm thick gallium nitride on 100 mm diameter silicon (1 1 1) substrate using metal-organic chemical vapor deposition. For strain engineering an aluminum nitride buffer and several interlayers were applied. The realized gallium nitride layer-stack is crack-free. Several characterization methods were applied to study the crystalline quality. In X-ray diffraction measurements the full width at half maximum of the (0 0 2) reflection was found to be as low as 400″, whereas the (2 0 1) reflection showed a full width at half maximum of 580″. For verification transmission electron microscopy examinations were performed to determine the structural quality. A comparison to gallium nitride, grown on sapphire, is made.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 211–215
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 211–215
نویسندگان
P. Drechsel, H. Riechert,