Growth of the active zone in nitride based long wavelength laser structures

InxGa1−xN/GaN quantum well (QW) structures grown on c-plane surfaces for long wavelength light emitters have been investigated intended. We reached indium concentrations of xIn≥0.35 with good optical and structural quality. For QW thicknesses dQW≤2nm a fully strained layer structure is observed. QWs of such high indium concentrations, however, are very sensitive to the growth conditions of the subsequent layers and thermal stability/degradation becomes an important issue. We modified the growth of the QWs to avoid or minimize V-pit formation without temperature ramping in the barriers and showed that their properties were unchanged when used in the active zone of a laser structure.