کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792953 | 1023662 | 2010 | 4 صفحه PDF | دانلود رایگان |
Single-crystalline ZnO films have been grown on a-plane sapphire in plasma assisted molecular beam epitaxy by introducing a high-temperature ZnO buffer layer. The residual electron concentration of the films can be lowered to 1.5×1016 cm−3, comparable with the best value ever reported for ZnO films grown on a rare and costly substrate of ScAlMgO4. A 3×3 reconstruction has been observed on the films grown in this route, which reveals that the films have very smooth surface. X-ray phi-scan spectrum of the films shows six peaks with 60° intervals, and two-dimensional X-ray diffraction datum indicates the single-crystalline nature of the films. Low temperature photoluminescence spectrum of the films shows a dominant free exciton emission and five phonon replicas, confirming the high quality of the films.
Journal: Journal of Crystal Growth - Volume 312, Issue 20, 1 October 2010, Pages 2861–2864