کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793117 | 1023666 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of high-electron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of high-electron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water Fabrication of high-electron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water](/preview/png/1793117.png)
چکیده انگلیسی
Hot H2O jet evolved by the exothermic reaction of H2 with O2 on a Pt-dispersed ZrO2 catalyst was employed for gas-phase hydrolysis of dimethyl zinc to fabricate thin ZnO films. The X-ray diffraction pattern and photoluminescence spectra showed that the ZnO epilayers directly grown on a-sapphire substrate at 873Â K had a defect free crystal structure close to a single crystal. The as-grown ZnO epilayers exhibited average transparency higher than 90% in the visible and infrared regions (400-2000Â nm). The epilayers had high electron mobilities of 140-170Â cm2Â Vâ1Â sâ1 and low residual electron concentrations of 1.7-6Ã1017Â cmâ3 that are significantly better than those for ZnO films so far reported by conventional chemical vapor deposition and any other energy-consuming physical method such as pulse laser deposition and molecular beam epitaxy. The present method uses the chemical energy from only H2 and O2, which is energy-saving and ecologically friendly, while it is superior in high-quality ZnO fabrication. It is also pointed out that the method raises unlimited possibilities for a wide range of the fabrication of high-quality metal oxide epilayers, because of the availability for various volatile alkyl metals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 4, 1 February 2010, Pages 483-486
Journal: Journal of Crystal Growth - Volume 312, Issue 4, 1 February 2010, Pages 483-486
نویسندگان
Hiroshi Nishiyama, Hitoshi Miura, Kanji Yasui, Yasunobu Inoue,