کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793218 | 1023669 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Novel approach to the fabrication of a strain- and crack-free GaN free-standing template: Self-separation assisted by the voids spontaneously formed during the transition in the preferred orientation
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A c-oriented GaN film was grown on a r-plane sapphire substrate by utilizing hydride vapor phase epitaxy. This non-typical orientational relation between the film and the substrate was possible by spontaneous transition in preferred orientation, and voids were spontaneously formed in an orientation-transition layer. This c-oriented thick GaN film was then self-separated from the substrate during cool-down process to room temperature after the growth. This intriguing phenomenon of the self-separation of crack- and strain-free GaN is attributed to the spontaneous formation of voids during the preferred orientation-transition, and suggests a novel method to fabricate crack- and strain-free GaN free-standing templates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 2, 1 January 2010, Pages 198–201
Journal: Journal of Crystal Growth - Volume 312, Issue 2, 1 January 2010, Pages 198–201
نویسندگان
Hyun-Jae Lee, T. Goto, K. Fujii, T. Yao, Chinkyo Kim, Jiho Chang,