Growth and characterization of GaSe single crystal

A systematic study on structural and morphological properties of gallium selenide (GaSe) single crystals grown by vertical Bridgman technique is reported. A hexagonal structure of GaSe with lattice parameters a=b=3.74909 Å and c=15.90698 Å has been confirmed with the help of powder X-ray diffraction (XRD). Respective values of strain (3.43×10−4 lin−2 m−4) and dislocation density (1.35×1014 lin m−2) have been calculated using powder X-ray diffraction results. High resolution X-ray diffraction (HRXRD) has been performed to ascertain the crystalline perfection of the grown single crystal. The scanning electron microscopy (SEM) and powder X-ray diffraction results are in good agreement as far as the grain size of the grown gallium selenide (GaSe) crystal is concerned.