کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793346 | 1023673 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of crystal orientation of CdTe epitaxial layers grown on (0Â 0Â 1) GaAs with ZnSe buffer layer by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
CdTe layers were grown on (0Â 0Â 1) GaAs substrates with a ZnSe buffer layer by molecular beam epitaxy. The high-quality ZnSe (0Â 0Â 1) epitaxy on GaAs allows us to control the II-VI/III-V heterovalent interface prior to the CdTe deposition. By subsequently adjusting the interface between ZnSe and CdTe, it was possible to selectively obtain the growth of either (0Â 0Â 1) or (1Â 1Â 1) CdTe epitaxial layers on the (0Â 0Â 1) ZnSe/GaAs substrate. Reflection high energy electron diffraction indicates that the nucleation of the CdTe epitaxial layers turns two-dimensional within a few seconds of initiating the growth. X-ray diffraction and photoluminescence measurements indicate that both the (1Â 1Â 1) and the (0Â 0Â 1) CdTe films are of high structural quality despite the large lattice constant mismatch of 14.6% between CdTe and the (0Â 0Â 1) ZnSe/GaAs substrate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 9, 15 April 2009, Pages 2603-2607
Journal: Journal of Crystal Growth - Volume 311, Issue 9, 15 April 2009, Pages 2603-2607
نویسندگان
Qiang Zhang, William Charles, Bingsheng Li, Aidong Shen, Carlos A. Meriles, Maria C. Tamargo,