کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793450 | 1023677 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth](/preview/png/1793450.png)
چکیده انگلیسی
The effect of the RF coil position during the stages of sapphire crystal growth process in an inductively heated Czochralski crystal growth furnace on the thermal and flow transport, the shape of the crystal-melt interface shape, and the power requirements is investigated numerically. The results show that although the maximum values of temperature and velocity decrease, the convexity of the crystal-melt interface increases as the crystal length grows. It is found that the least input power is required if the central position of the RF coil is maintained below the central position of the melt during the crystal growth process. Under such crystal growth conditions, the temperature gradients along the crystalline front are small.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1074-1079
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1074-1079
نویسندگان
Chung-Wei Lu, Jyh-Chen Chen, Chien-Hung Chen, Chun-Hung Chen, Wen-Ching Hsu, Che-Ming Liu,