کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793510 | 1023677 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Observation of optical bleaching at 1.06 μm in AlInAs/AlGaInAs multiple quantum wells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
We investigated the growth and optical properties of Al0.48In0.52As/Al0.27Ga0.21In0.52As multiple quantum wells. Conditions were established for the defect-free growth of Al0.48In0.52As by metalorganic vapor phase epitaxy and multiple-quantum-well saturable absorbers were fabricated. Simulation of X-ray diffraction patterns indicated that the interfaces in this system are abrupt without unintentional interface layers. Cross-sectional transmission electron microscopy proved that structural defects are absent for structures exceeding 6 μm in thickness. Room temperature photoluminescence displayed a nearly constant linewidth as the number of quantum-well periods is increased, further attesting to the optical quality of these structures. Using transient pump-probe optical techniques, we measured the absorbance bleaching decay of a saturable absorber. These measurements suggested that the bleaching lifetime is over 100 ns, which should be sufficient for Q-switching solid-state lasers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1375-1378
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1375-1378
نویسندگان
J.G. Cederberg, D.A. Bender, M.V. Pack, R.L. Schmitt,