کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793510 1023677 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Observation of optical bleaching at 1.06 μm in AlInAs/AlGaInAs multiple quantum wells
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Observation of optical bleaching at 1.06 μm in AlInAs/AlGaInAs multiple quantum wells
چکیده انگلیسی
We investigated the growth and optical properties of Al0.48In0.52As/Al0.27Ga0.21In0.52As multiple quantum wells. Conditions were established for the defect-free growth of Al0.48In0.52As by metalorganic vapor phase epitaxy and multiple-quantum-well saturable absorbers were fabricated. Simulation of X-ray diffraction patterns indicated that the interfaces in this system are abrupt without unintentional interface layers. Cross-sectional transmission electron microscopy proved that structural defects are absent for structures exceeding 6 μm in thickness. Room temperature photoluminescence displayed a nearly constant linewidth as the number of quantum-well periods is increased, further attesting to the optical quality of these structures. Using transient pump-probe optical techniques, we measured the absorbance bleaching decay of a saturable absorber. These measurements suggested that the bleaching lifetime is over 100 ns, which should be sufficient for Q-switching solid-state lasers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1375-1378
نویسندگان
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