On the pressure difference ranges which assure a specified gap size for semiconductor crystals grown in terrestrial dewetted Bridgman

Because the interest is to grow crystals with specified gap size, the ΔP limits and the corresponding menisci shapes for which dewetting is feasible are first established, on the base of the theoretical and computational investigations. Then, for the obtained menisci, the static stability via the conjugate point criterion of the calculus of variations is studied in the cases of the classical semiconductors grown in (i) uncoated crucibles (i.e., the wetting angle θc and growth angle αe satisfy the inequality θc+αe<180∘) and (ii) coated crucibles or pollution (θc+αe≥180∘). In this way, gap thickness limitations for which the menisci are physically realizable are obtained. Numerical results are performed for InSb crystal grown in uncoated ampoule, and for Ge crystal grown in coated ampoule.