کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1793533 | 1023678 | 2009 | 5 صفحه PDF | دانلود رایگان |
The crystalline, surface, and optical properties of the (1 0 1¯ 3¯) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (1 0 1¯ 3¯) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2×105 cm−2, revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44 eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement.
Journal: Journal of Crystal Growth - Volume 311, Issue 17, 15 August 2009, Pages 4153–4157