کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793565 | 1023679 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure analysis of GaAs nanocrystals with anisotropic basal plane grown on Si(1Â 0Â 0) surface
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structure analysis of GaAs nanocrystals with anisotropic basal plane grown on Si(1Â 0Â 0) surface Structure analysis of GaAs nanocrystals with anisotropic basal plane grown on Si(1Â 0Â 0) surface](/preview/png/1793565.png)
چکیده انگلیسی
The nanostructure of GaAs nanocrystals grown on Si(1 0 0) surface was investigated by plan-view and cross-sectional transmission electron microscopic observations. The shape change from nearly isotropic base to anisotropic rectangular base elongated along [0 1¯ 1] or [0 1 1] direction appears pronouncedly in GaAs nanocrystals above the major axis length of around 20 nm. In the GaAs nanocrystals with anisotropic rectangular base, there are parallel moiré fringes along the major axis and dense stacking faults along the minor axis, we found that {0 2 2} lattice spacings along the minor and major axes of the nanocrystal are nearly equivalent to those in bulk Si and GaAs, respectively. These results suggest that the stacking faults are formed on one of four {1 1 1} slip planes of larger-sized GaAs nanocrystal to relax the accumulated lattice strain, and that the GaAs nanocrystal preferentially grows along the ã0 1 1ã direction in which the stacking faults are repeatedly formed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 8, 1 April 2009, Pages 2269-2274
Journal: Journal of Crystal Growth - Volume 311, Issue 8, 1 April 2009, Pages 2269-2274
نویسندگان
Hiroyuki Usui, Satoshi Mukai, Hidehiro Yasuda, Hirotaro Mori,