کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793634 | 1023680 | 2009 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Seeded growth of AlN bulk crystals in m- and c-orientation Seeded growth of AlN bulk crystals in m- and c-orientation](/preview/png/1793634.png)
Seeded growth of AlN boules was achieved on m-(1 0 1¯ 0) and c-(0 0 0 1¯) orientations by physical vapor transport (PVT). The single crystalline m- and c-plane seeds were cut from freestanding AlN single crystals. AlN boules 12 mm in diameter and 7 mm in height were grown at source temperatures around 2280 °C in N2 atmosphere at 500 Torr of total pressure. Under identical process conditions, the m- and c-plane boules exhibited the same growth rates, 150–170 μm/h, and similar expansion angles, 22–27°, which indicated that the growth was controlled by the thermal profile inside the crucible rather than by crystallographic differences. X-ray rocking curve analysis and Raman spectroscopy confirmed that both m- and c-plane grown crystals possessed high crystalline quality. The dislocation density in both crystals was non-uniform and in the range 102–105 cm−2, as characterized by X-ray topography.
Journal: Journal of Crystal Growth - Volume 312, Issue 1, 15 December 2009, Pages 58–63