کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793730 | 1023681 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystallization of In-Se/CuInSe2 thin-film stack by sequential electrodeposition and annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CuInSe2 (CIS) films with large grain sizes and slightly In-rich composition ratios were realized by a sequential electrodeposition (ED) and annealing of In-Se/CIS bilayers. In general, ED-CIS films needed to be crystallized by annealing and the Cu/In ratios needed adjustment by KCN etching because they were amorphous with Cu-rich compositional ratios. KCN etchings cause pits and crevasses as defects by removal of Cu2âxSe compounds formed on the surface and in the grain boundary in the annealing process. These defects should work as shunt paths for solar cells with ED-CIS films. In this study, we attempted to fabricate In-Se/CIS bilayers by sequential ED and annealing to solve this serial issue. ED-In-Se films could be realized not on ED-CIS films but on the annealed CIS films by the difference in each oxidation potential. At the electric charges of 1.5-1.8 C for In-Se with a coulomb meter, Cu/In ratios of bilayers annealed at 600 °C for 10 min under Ar atmosphere could be adjusted to 0.9-1.0. At the same annealing condition, the complete intermixing of bilayers and the crystal grain growth were realized. As a result, the best solar cell fabricated with the film resulted in around 2% efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 3, 15 January 2009, Pages 738-741
Journal: Journal of Crystal Growth - Volume 311, Issue 3, 15 January 2009, Pages 738-741
نویسندگان
Y. Oda, M. Matsubayashi, T. Minemoto, H. Takakura,