کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793749 | 1023681 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and transport properties of strained SiGe grown on V-groove patterned Si(1 1 0) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Structural and transport properties of strained SiGe grown on V-groove patterned Si(1 1 0) substrates Structural and transport properties of strained SiGe grown on V-groove patterned Si(1 1 0) substrates](/preview/png/1793749.png)
چکیده انگلیسی
The growth of SiGe crystals on a V-groove patterned Si(1 1 0) substrate and the fabrication of pMOSFET using this material were carried out. The crystalline and surface morphologies were significantly improved compared to those of a film grown on a planar Si(1 1 0) substrate. A self-organized selective growth was observed, which was attributed to the local enhancement of the sticking coefficient. A significant enhancement of drain conductance was accomplished, which was attributed to the lower effective mass of strained SiGe crystal which became effective by the improvement of crystalline morphology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 3, 15 January 2009, Pages 814–818
Journal: Journal of Crystal Growth - Volume 311, Issue 3, 15 January 2009, Pages 814–818
نویسندگان
Keisuke Arimoto, Genki Kawaguchi, Kana Shimizu, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki,