کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794198 | 1023693 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We investigate the role of p- and n-type doping in strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy. It is found that p-type Be-doping can improve material properties, resulting in smaller surface roughness and lower threading dislocation density, while n-type Si-doping has an opposite effect. The effect is strongly dependent on the grading profile, with linear grading showing small differences, while there is a significant difference when an exponential grading is used. Since doping is essential for many types of devices, these results are useful for improving the material properties and performance of metamorphic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1684–1687
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1684–1687
نویسندگان
I. Tångring, Y.X. Song, Z.H. Lai, S.M. Wang, M. Sadeghi, A. Larsson,