High-temperature growth of heteroepitaxial InSb films on Si(1 1 1) substrate via the InSb bi-layer

To achieve the high-temperature growth of heteroepitaxial InSb films on the InSb bi-layer, we studied the influence of substrate temperature of first layer deposition (Ts1) on the two-step growth procedure. Although the growth at higher Ts1 of 240 and 280 °C is difficult to achieve using the usual procedure due to the desorption of In atoms from the InSb bi-layer, it can be realized by means of the adsorption of excess Sb atoms onto an initial InSb bi-layer prepared via √7×√3-In surface reconstruction. The high-temperature growth of 30°-rotated InSb films at 420 °C was demonstrated on a Si(1 1 1) substrate with a InSb bi-layer. The electron mobility of the InSb film grown at 420 °C was about 20,000 cm2/V s at RT.