کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1794434 1023698 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Freestanding 2-in GaN layers using lateral overgrowth with HVPE
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Freestanding 2-in GaN layers using lateral overgrowth with HVPE
چکیده انگلیسی

Hydride vapor phase epitaxy (HVPE) was used for the lateral overgrowth of thick GaN layers over masks of tungsten silicide nitride (WSiN). This mask material reduces sticking between the overgrown GaN and the mask and promotes the self-separation of the overgrown layers. Evaluation of the reflectance transient of the growing GaN layer indicates that the separation already occurs during growth and is caused by the intrinsic tensile strain of the growing GaN layer. This strain causes a strong concave bowing which is preserved even after cooling down.To reduce this residual bow of the freestanding GaN layers different approaches have been evaluated. It was found that the moment of separation is influenced by the mask geometry and that the temperature at this moment has an effect on the residual bow. The strain state of the template and the resulting bow at growth temperature are indicated to affect the residual bow as shown from the comparison of SiC- and sapphire-based GaN templates.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 310, Issue 5, 1 March 2008, Pages 911–915
نویسندگان
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