کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794495 | 1023700 | 2008 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Development of oxygen transport model in Czochralski growth of silicon crystals Development of oxygen transport model in Czochralski growth of silicon crystals](/preview/png/1794495.png)
Oxygen is one of the most important impurities in Czochralski (Cz)-grown silicon crystals. The precise control of oxygen concentration in growing crystal, both in radial and in axial directions, is required to obtain silicon wafers with necessary electronic properties. A modified numerical model of oxygen transport as a way of prediction of oxygen concentration in growing Si crystals is described in this paper. Test calculations for the updated model were performed for a Cz setup with a small crucible diameter and weak turbulent melt flow. The calculated oxygen profile along the crystallization front is compared with available experimental data. 2-D and 3-D calculation results have evaluated the number of finite volumes in 3-D grid, required for precise description of oxygen transport in the small growth system.
Journal: Journal of Crystal Growth - Volume 310, Issue 12, 1 June 2008, Pages 2970–2976