Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Silicon single crystals are grown by the Czochralski method with various growing conditions. Effective segregation coefficient of boron is found to depend on the magnetic field in cusp-magnetic Cz method. Effects of zero-Gauss plane (ZGP), ZGP shape and magnetic intensity (MI) on the dopant concentration and its distribution in the crystal are experimentally investigated. The shape of ZGP is not only flat but also parabolic due to the magnetic ratio (MR), which is the ratio of the lower to upper electric-current densities in the configurations of the cusp-magnetic field. Equilibrium distribution coefficient of boron calculated by BPS model is 0.698. With the crystal rotation (w) of 16 rpm and the crucible rotation of −0.5 rpm, the effective distribution coefficient (ke) is 0.728 in zero magnetic intensity and increases up to 0.8093 in the parabolic ZGP shape. Although the magnetic strength near the crystal–melt interface decreases with increasing MR, it increases in the bulk melt, and hence ke increases. Flow stability in the bulk melt influences ke. At the magnetic field and growing conditions, ke increases with increasing initial charge size of the silicon melt. There is no significant influence of ZGP on the radial distribution of the boron concentration. Simulation results of melt flow in the presence of a parabolic ZGP are outlined, and the segregation results in the experiments are compared with published experimental data.