کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794657 | 1023704 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bulk single-crystal growth of ternary AlxGa1−xN from solution in gallium under high pressure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Bulk single-crystal growth of ternary AlxGa1−xN from solution in gallium under high pressure Bulk single-crystal growth of ternary AlxGa1−xN from solution in gallium under high pressure](/preview/png/1794657.png)
چکیده انگلیسی
We have successfully grown bulk, single crystals of AlxGa1−xN with the Al content x ranging from 0.5 to 0.9. Samples were grown from Ga melt under high nitrogen pressure (up to 10 kbar) and at high temperature (up to 1800 °C) using a gas pressure system. The homogeneity and Al content of the crystals were investigated by X-ray diffraction and laser ablation mass spectrometry. On the basis of the high-pressure experiments, the corresponding pressure–temperature (p–T) phase diagram of Al–Ga–N was derived. The bandgap of the material was determined by the femtosecond two-photon absorption autocorrelation method and is equal to 5.81±0.01 eV for the Al0.86Ga0.14N crystals.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 16, 1 August 2009, Pages 3971–3974
Journal: Journal of Crystal Growth - Volume 311, Issue 16, 1 August 2009, Pages 3971–3974
نویسندگان
A. Belousov, S. Katrych, J. Jun, J. Zhang, D. Günther, Roman Sobolewski, J. Karpinski, B. Batlogg,