Improvement of InAs quantum dots optical properties in close proximity to GaAs(0 0 1) substrate surface

In this work we demonstrate a growth process for obtaining high optical emission efficiency InAs/GaAs(0 0 1) quantum dots (QD) formed at short distance to the interface with the GaAs substrate. In particular, after an initial exposure of the substrate surface to long times of atomic hydrogen flux (tH up to 45 min) followed by a posterior growth of a GaAs buffer layer by atomic layer molecular beam epitaxy, both steps at low substrate temperature (TS=450 °C), an enhancement of InAs QD optical emission efficiency is obtained, even at close proximity (3.5 nm) to the substrate interface. This process fulfils the strict requirements in terms of substrate temperature and buffer layer thickness (distance from the QD to the substrate interface) for its possible use as an optimal regrowth protocol on previously patterned GaAs substrates.